N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-23-6 package. Features 60V Drain to Source Voltage (Vdss) and 20V Gate to Source Voltage (Vgs). Offers 510mA Continuous Drain Current (ID) and 2.4 Ohm Rds On Max. Operates from -65°C to 150°C with 700mW Max Power Dissipation. Includes 3.9ns Turn-On Delay Time and 9.9ns Fall Time.
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| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 510mA |
| Current Rating | 305mA |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 9.9ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 2.4R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15.7ns |
| Turn-On Delay Time | 3.9ns |
| DC Rated Voltage | 60V |
| Width | 1.6mm |
| RoHS | Compliant |
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