N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-363 package. Features 60V Drain to Source Voltage (Vdss), 305mA Continuous Drain Current (ID), and 2 Ohm Drain-source On Resistance-Max. Operates within a temperature range of -65°C to 150°C with a Max Power Dissipation of 200mW. This RoHS compliant component offers a 1.6V Threshold Voltage and 50pF Input Capacitance.
PackageSOT-363
Current Rating305mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN601DWK-7 technical specifications.
General
Package/Case
SOT-363
Continuous Drain Current (ID)
305mA
Current Rating
305mA
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
60V
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Height
1mm
Input Capacitance
50pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Nominal Vgs
1.6V
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Threshold Voltage
1.6V
DC Rated Voltage
60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMN601DWK-7 Datasheet
Download the complete datasheet for Diodes DMN601DWK-7 to view detailed technical specifications.
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