DIODES

DMN601DWK-7

Datasheet

60V N-Channel JFET, 305mA ID, 2R Rds(on), SOT-363

Diodes

DMN601DWK-7

Name: DMN601DWK-7 Diodes
Brand: Diodes
SKU: DMN601DWK-7

60V N-Channel JFET, 305mA ID, 2R Rds(on), SOT-363

N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOT-363 package. Features 60V Drain to Source Voltage (Vdss), 305mA Continuous Drain Current (ID), and 2 Ohm Drain-source On Resistance-Max. Operates within a temperature range of -65°C to 150°C with a Max Power Dissipation of 200mW. This RoHS compliant component offers a 1.6V Threshold Voltage and 50pF Input Capacitance.

PackageSOT-363

Current Rating305mA

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Diodes DMN601DWK-7 technical specifications.

General

Package/Case	SOT-363
Continuous Drain Current (ID)	305mA
Current Rating	305mA
Drain to Source Resistance	3R
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	2R
Dual Supply Voltage	60V
FET Type	2 N-Channel
Gate to Source Voltage (Vgs)	20V
Height	1mm
Input Capacitance	50pF
Lead Free	Lead Free
Length	2.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	200mW
Mount	Surface Mount
Nominal Vgs	1.6V
Number of Channels	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	2R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Termination	SMD/SMT
Threshold Voltage	1.6V
DC Rated Voltage	60V
Weight	0.000212oz
Width	1.35mm