N-channel JFET with 60V drain-source voltage and 300mA continuous drain current. Features low on-resistance of 2 Ohms and 150mW power dissipation. This surface-mount silicon transistor is housed in a compact SOT-523 plastic package, operating from -65°C to 150°C. It is RoHS and REACH SVHC compliant.
PackageSOT-523
Current Rating300mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Diodes DMN601TK-7 technical specifications.
General
| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 300mA |
| Current Rating | 300mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 50pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN601TK-7 Datasheet
Download the complete datasheet for Diodes DMN601TK-7 to view detailed technical specifications.
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