N-Channel Silicon Metal-oxide Semiconductor FET for surface mount applications. Features 60V Drain to Source Voltage (Vdss) and a maximum continuous drain current (ID) of 5A. Offers low Drain to Source Resistance (Rds On Max) of 44mR. Operating temperature range spans from -55°C to 150°C. Packaged in TSOT with a 2.9mm length, 1.6mm width, and 0.9mm height.
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Diodes DMN6040SVT-7 technical specifications.
| Package/Case | TSOT |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.9mm |
| Input Capacitance | 1.287nF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.1ns |
| Turn-On Delay Time | 6.6ns |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN6040SVT-7 to view detailed technical specifications.
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