N-Channel Silicon Metal-oxide Semiconductor FET, 2-Element, Surface Mount, SOIC package. Features 60V Drain to Source Voltage (Vdss), 3.3A Continuous Drain Current (ID), and a maximum Drain-source On Resistance of 66mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.8W. Includes 2.7ns turn-on delay and 5.4ns fall time.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMN6066SSD-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMN6066SSD-13 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.3A |
| Drain to Source Resistance | 48mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 66mR |
| Fall Time | 5.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 502pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 66mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 14.7ns |
| Turn-On Delay Time | 2.7ns |
| Weight | 0.00261oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN6066SSD-13 Datasheet
Download the complete datasheet for Diodes DMN6066SSD-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
