
N-channel enhancement mode power MOSFET in a 3-pin TO-252AA (DPAK) lead-frame SMT package. Features a maximum drain-source voltage of 60V, continuous drain current of 6A, and a low drain-source on-resistance of 68mOhm at 10V. Surface mountable with gull-wing leads, this single-element transistor offers a maximum power dissipation of 8490mW and operates from -55°C to 150°C.
Diodes DMN6068LK3 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | TO-252 |
| Package/Case | DPAK |
| Package Description | Deca Watt Package |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 2 |
| Tab | Tab |
| Package Length (mm) | 6.58 |
| Package Width (mm) | 6.1 |
| Package Height (mm) | 2.29 |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-252AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6A |
| Maximum Drain Source Resistance | 68@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|10.3@10VnC |
| Typical Gate Charge @ 10V | 10.3nC |
| Typical Input Capacitance @ Vds | 502@30VpF |
| Maximum Power Dissipation | 8490mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 6M0U4 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Download the complete datasheet for Diodes DMN6068LK3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.