N-Channel Silicon MOSFET, 60V Drain-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 2 Ohm Max Drain-Source On-Resistance (Rds On). This single-element field-effect transistor features a DFN package for surface mounting, with a max power dissipation of 470mW. Operating temperature range spans from -55°C to 150°C, and it is RoHS compliant. Key switching characteristics include a 3.4ns turn-on delay and a 16.3ns fall time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMN62D0LFB-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMN62D0LFB-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 32pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 470mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 470mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DMN62 |
| Turn-Off Delay Time | 26.4ns |
| Turn-On Delay Time | 3.4ns |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMN62D0LFB-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
