N-Channel Silicon MOSFET, 60V Drain-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 2 Ohm Max Drain-Source On-Resistance (Rds On). This single-element field-effect transistor features a DFN package for surface mounting, with a max power dissipation of 470mW. Operating temperature range spans from -55°C to 150°C, and it is RoHS compliant. Key switching characteristics include a 3.4ns turn-on delay and a 16.3ns fall time.
PackageDFN
MountingSurface Mount
PolarityN-CHANNEL
Power470mW
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Technical Specifications
Diodes DMN62D0LFB-7 technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 100mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 16.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 32pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 470mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 470mW |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | DMN62 |
| Turn-Off Delay Time | 26.4ns |
| Turn-On Delay Time | 3.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMN62D0LFB-7 Datasheet
Download the complete datasheet for Diodes DMN62D0LFB-7 to view detailed technical specifications.
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