DMN62D0LFB-7

N-Channel Silicon MOSFET, 60V Drain-Source Voltage (Vdss), 100mA Continuous Drain Current (ID), and 2 Ohm Max Drain-Source On-Resistance (Rds On). This single-element field-effect transistor features a DFN package for surface mounting, with a max power dissipation of 470mW. Operating temperature range spans from -55°C to 150°C, and it is RoHS compliant. Key switching characteristics include a 3.4ns turn-on delay and a 16.3ns fall time.