DMN63D8LV-7

N-Channel Silicon Metal-oxide Semiconductor FET, 2-element configuration, designed for surface mounting in a compact SOT-563 plastic package. Features a continuous drain current of 260mA and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source resistance (Rds On Max) of 2.8 Ohms and a typical input capacitance of 22pF. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 450mW. This RoHS compliant component exhibits fast switching characteristics with a turn-on delay time of 3.3ns and a fall time of 6.3ns.