N-channel silicon Metal-oxide Semiconductor FET (MOSFET) for small signal applications. Features a 60V Drain to Source Voltage (Vdss) and 400mA Continuous Drain Current (ID). Offers a low Drain to Source Resistance (Rds On) of 3 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 430mW. Packaged in a 3-pin X1-DFN1006-3 surface mount plastic package, supplied on tape and reel. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
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Diodes DMN65D8LFB-7B technical specifications.
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 6.29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 25pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 430mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.025ns |
| Turn-On Delay Time | 3.27ns |
| RoHS | Compliant |
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