N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element field-effect transistor designed for small signal applications. Features a 60V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 300mA. Offers a low drain-to-source resistance (Rds On Max) of 3 Ohms. Packaged in a compact SOT-323 surface-mount plastic package, this component is lead-free and RoHS compliant. Operating temperature range spans from -55°C to 150°C.
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| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 7.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 22pF |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 12.6ns |
| Turn-On Delay Time | 2.7ns |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
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