DMN65D8LW-7

N-Channel Silicon Metal-Oxide Semiconductor FET, a single-element field-effect transistor designed for small signal applications. Features a 60V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 300mA. Offers a low drain-to-source resistance (Rds On Max) of 3 Ohms. Packaged in a compact SOT-323 surface-mount plastic package, this component is lead-free and RoHS compliant. Operating temperature range spans from -55°C to 150°C.