N-Channel Silicon Metal-oxide Semiconductor FET for small signal applications. Features 60V Drain-to-Source Voltage (Vdss) and 115mA Continuous Drain Current (ID). Offers 6 Ohms Drain-to-Source Resistance (Rds On Max) and 20V Gate-to-Source Voltage (Vgs). Packaged in a SOT-323 surface mount plastic package, this 1-element transistor operates from -55°C to 150°C with a maximum power dissipation of 200mW. Includes 10ns turn-on and 33ns turn-off delay times.
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Diodes DMN66D0LW-7 technical specifications.
| Package/Case | SOT-323 |
| Continuous Drain Current (ID) | 115mA |
| Drain to Source Resistance | 6R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Input Capacitance | 23pF |
| Length | 2.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 6R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000212oz |
| Width | 1.3mm |
| RoHS | Compliant |
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