DMP2004DWK-7

P-Channel JFET, 2-element, silicon, metal-oxide semiconductor FET for surface mount applications. Features 20V drain-source voltage (Vdss), 430mA continuous drain current (ID), and 900mR drain-source on resistance (Rds On Max). Operates from -65°C to 150°C with a maximum power dissipation of 250mW. Packaged in a 1mm height SOT-363 plastic package, this component is lead-free and RoHS compliant.