P-channel, silicon, Metal-oxide Semiconductor FET designed for small signal applications. Features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (ID) of 430mA. Offers a low Drain-Source On Resistance (Rds On) of 1.1 Ohms. Packaged in a compact SOT-523 surface mount plastic package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW.
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| Package/Case | SOT-523 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.1R |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 175pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Rds On Max | 1.1R |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Weight | 7.1E-05oz |
| Width | 0.8mm |
| RoHS | Compliant |
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