P-channel, silicon, Metal-oxide Semiconductor FET designed for small signal applications. Features a 20V Drain-Source Voltage (Vdss) and a continuous Drain Current (ID) of 430mA. Offers a low Drain-Source On Resistance (Rds On) of 1.1 Ohms. Packaged in a compact SOT-523 surface mount plastic package, this component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW.
PackageSOT-523
MountingSurface Mount
PolarityP-CHANNEL
Power150mW
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Technical Specifications
Diodes DMP2004TK-7 technical specifications.
General
Package/Case
SOT-523
Continuous Drain Current (ID)
430mA
Drain to Source Resistance
1.1R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.1R
Gate to Source Voltage (Vgs)
8V
Height
0.75mm
Input Capacitance
175pF
Lead Free
Lead Free
Length
1.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
150mW
Radiation Hardening
No
Rds On Max
1.1R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Weight
7.1E-05oz
Width
0.8mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP2004TK-7 Datasheet
Download the complete datasheet for Diodes DMP2004TK-7 to view detailed technical specifications.
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