P-Channel, Silicon, Metal-oxide Semiconductor FET for small signal applications. Features 20V Drain-to-Source Voltage (Vdss) and 400mA Continuous Drain Current (ID). Offers a maximum Drain-source On Resistance (Rds On) of 900mR. Packaged in a 3-pin SOT-323 surface mount plastic package, this component operates from -55°C to 150°C and is RoHS and REACH SVHC compliant.
PackageSOT-323
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP2004WK-7 technical specifications.
General
Package/Case
SOT-323
Continuous Drain Current (ID)
400mA
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
900mR
Gate to Source Voltage (Vgs)
8V
Height
1mm
Input Capacitance
175pF
Lead Free
Lead Free
Length
2.2mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP2004WK-7 Datasheet
Download the complete datasheet for Diodes DMP2004WK-7 to view detailed technical specifications.
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