DMP2012SN-7

P-channel, silicon, metal-oxide semiconductor FET designed for small signal applications. Features a continuous drain current of -700mA and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 300mR at a nominal gate-to-source voltage of -1.2V. This surface mount transistor has a threshold voltage of -1.2V and a maximum power dissipation of 500mW. Packaged in a compact SC-59 (TO-236-3) plastic package, it operates across a wide temperature range from -65°C to 150°C.