P-channel MOSFET, 20V drain-source voltage, 9.2A continuous drain current, and 16mΩ maximum drain-source on-resistance. This silicon Metal-Oxide-Semiconductor FET features a 1-element configuration and is designed for surface mounting in a U-DFN2523-6 package. It operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. The component is lead-free, RoHS compliant, and REACH SVHC compliant.
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Diodes DMP2018LFK-7 technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 100.6ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.58mm |
| Input Capacitance | 4.748nF |
| Lead Free | Lead Free |
| Length | 2.55mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 240.8ns |
| Turn-On Delay Time | 22.8ns |
| Width | 2.35mm |
| RoHS | Compliant |
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