P-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a maximum drain-source voltage of 25V and a continuous drain current of 6.7A. Offers a low drain-source on-resistance of 27mR (max). Operates across a temperature range of -55°C to 150°C. Packaged in a U-DFN2020-6 surface-mount plastic package.
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| Continuous Drain Current (ID) | 6.7A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 27mR |
| Fall Time | 80.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.58mm |
| Input Capacitance | 2.53nF |
| Lead Free | Lead Free |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 27mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 137.6ns |
| Turn-On Delay Time | 15.1ns |
| Width | 2.05mm |
| RoHS | Compliant |
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