P-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a maximum drain-source voltage of 25V and a continuous drain current of 6.7A. Offers a low drain-source on-resistance of 27mR (max). Operates across a temperature range of -55°C to 150°C. Packaged in a U-DFN2020-6 surface-mount plastic package.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP2039UFDE-7 technical specifications.
General
Continuous Drain Current (ID)
6.7A
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
27mR
Fall Time
80.5ns
Gate to Source Voltage (Vgs)
8V
Height
0.58mm
Input Capacitance
2.53nF
Lead Free
Lead Free
Length
2.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
800mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
27mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
137.6ns
Turn-On Delay Time
15.1ns
Width
2.05mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP2039UFDE-7 Datasheet
Download the complete datasheet for Diodes DMP2039UFDE-7 to view detailed technical specifications.
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