P-channel MOSFET with a continuous drain current of 4.6A and a drain-source voltage of -20V. Features a low drain-source on-resistance of 40mΩ at a gate-source voltage of 12V. This silicon, metal-oxide semiconductor FET offers a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C. Packaged in a 6-pin SOT-26 for surface mounting, it is RoHS compliant.
PackageSOT-26
MountingSurface Mount
PolarityP-CHANNEL
Power1.25W
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMP2066LDM-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMP2066LDM-7 technical specifications.
General
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 40mR |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.1mm |
| Input Capacitance | 820pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.25W |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 960mV |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 4.4ns |
| Width | 1.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP2066LDM-7 Datasheet
Download the complete datasheet for Diodes DMP2066LDM-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
