
P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 40mΩ drain-source resistance and 1.25W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a compact SC-59 (TO-236-3) surface-mount package, ideal for applications requiring efficient power switching. Operates across a wide temperature range from -55°C to 150°C.
Diodes DMP2066LSN-7 technical specifications.
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