P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 40mΩ drain-source resistance and 1.25W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a compact SC-59 (TO-236-3) surface-mount package, ideal for applications requiring efficient power switching. Operates across a wide temperature range from -55°C to 150°C.
PackageTO-236-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP2066LSN-7 technical specifications.
General
Package/Case
TO-236-3
Continuous Drain Current (ID)
4.6A
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
20V
Fall Time
9.9ns
Gate to Source Voltage (Vgs)
12V
Height
1.3mm
Input Capacitance
820pF
Lead Free
Lead Free
Length
3.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.25W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
28ns
Turn-On Delay Time
4.4ns
Weight
0.000282oz
Width
1.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP2066LSN-7 Datasheet
Download the complete datasheet for Diodes DMP2066LSN-7 to view detailed technical specifications.
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