P-channel MOSFET with 20V drain-source voltage and 4.6A continuous drain current. Features 40mΩ drain-source resistance and 1.25W maximum power dissipation. This silicon, metal-oxide semiconductor FET is housed in a compact SC-59 (TO-236-3) surface-mount package, ideal for applications requiring efficient power switching. Operates across a wide temperature range from -55°C to 150°C.
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Diodes DMP2066LSN-7 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.9ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.3mm |
| Input Capacitance | 820pF |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 40mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 4.4ns |
| Weight | 0.000282oz |
| Width | 1.7mm |
| RoHS | Compliant |
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