P-channel, silicon, metal-oxide semiconductor FET for small signal applications. Features a continuous drain current of 4.3A and a drain-to-source voltage of -20V. Offers a low drain-to-source resistance of 38mR at a gate-to-source voltage of 10V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 800mW. Packaged in a 3-pin SOT-23 surface mount plastic package, supplied on tape and reel.
PackageSOT-23
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Diodes DMP2100U-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Diodes DMP2100U-7 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 38mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 423ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 216pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 800mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 38mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 688ns |
| Turn-On Delay Time | 80ns |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP2100U-7 Datasheet
Download the complete datasheet for Diodes DMP2100U-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
