P-channel enhancement mode power MOSFET featuring a dual common source triple drain configuration. This surface-mount transistor offers a maximum drain-source voltage of 20V and a continuous drain current of 3A. Housed in a compact 9-pin U-WLB ball grid array package with dimensions of 1.49mm x 1.49mm x 0.36mm, it operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a maximum gate threshold voltage of 0.9V and a low drain-source on-resistance of 100mΩ at 4.5V.
PackageU-WLB
MountingSurface Mount
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Technical Specifications
Diodes DMP2100UCB9-7 technical specifications.
General
| Basic Package Type | Ball Grid Array |
| Package Family Name | U-WLB |
| Package/Case | U-WLB |
| Lead Shape | Ball |
| Pin Count | 9 |
| PCB | 9 |
| Package Length (mm) | 1.49 |
| Package Width (mm) | 1.49 |
| Package Height (mm) | 0.36 |
| Seated Plane Height (mm) | 0.62(Max) |
| Pin Pitch (mm) | 0.5 |
| Mounting | Surface Mount |
| Configuration | Dual Common Source Triple Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | -6V |
| Maximum Continuous Drain Current | 3A |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 232@10VpF |
| Maximum Power Dissipation | 1600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Diodes DMP2100UCB9-7 Datasheet
Download the complete datasheet for Diodes DMP2100UCB9-7 to view detailed technical specifications.
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