
P-channel, silicon, surface mount JFET with a continuous drain current of 860mA and a drain-source voltage of -20V. Features a low drain-source on-resistance of 150mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 850mW. Packaged in an ultra-small SOT-563 plastic package, this component is RoHS compliant.
Diodes DMP2104V-7 technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 860mA |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 150mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 320pF |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 850mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP2104V-7 to view detailed technical specifications.
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