P-Channel Silicon Metal-oxide Semiconductor FET, 3A continuous drain current (ID) and 20V drain-source voltage (Vdss). Features 72mR drain-source on-resistance (Rds On Max) and 1.4W maximum power dissipation. Operates across a -55°C to 150°C temperature range with a 12V gate-to-source voltage (Vgs). Packaged in a 3-pin SOT-23 surface mount plastic package, this single-element transistor offers fast switching with turn-on delay time of 12ns and fall time of 41ns.
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Diodes DMP2123L-7 technical specifications.
| Package/Case | SOT-23-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 72mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 72mR |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 443pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Radiation Hardening | No |
| Rds On Max | 72mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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