P-channel MOSFET, 20V Drain-Source Voltage (Vdss) and 3.4A Continuous Drain Current (ID). Features 80mΩ maximum Drain-Source On-Resistance (Rds On) and 1.25W maximum power dissipation. This single-element silicon FET is housed in a 6-pin SOT-23-6 plastic package for surface mounting. Operating temperature range is -55°C to 150°C, with typical turn-on delay of 12ns and turn-off delay of 38ns.
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Diodes DMP2130LDM-7 technical specifications.
| Package/Case | SOT-23-6 |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.6mm |
| Input Capacitance | 443pF |
| Length | 1.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 12ns |
| Width | 1.2mm |
| RoHS | Compliant |
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