P-Channel JFET for small signal applications, featuring a 20V drain-source voltage (Vdss) and 700mA continuous drain current (ID). This silicon MOSFET offers a low drain-source on-resistance (Rds On) of 970mR, with typical turn-on delay time of 8.5ns and fall time of 19.2ns. Packaged in an ultra-small, 3-pin X2-DFN1006H4-3 surface-mount DFN package, it operates from -55°C to 150°C and is lead-free and RoHS compliant.
PackageDFN
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP21D5UFB4-7B technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
700mA
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
970mR
Fall Time
19.2ns
Gate to Source Voltage (Vgs)
8V
Height
0.35mm
Input Capacitance
46.1pF
Lead Free
Lead Free
Length
1.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
970mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
20.2ns
Turn-On Delay Time
8.5ns
Width
0.65mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP21D5UFB4-7B Datasheet
Download the complete datasheet for Diodes DMP21D5UFB4-7B to view detailed technical specifications.
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