P-channel, silicon, Metal-oxide Semiconductor FET for small signal applications. Features a continuous drain current of 2.7A and a drain-source voltage of -20V. Offers a low drain-source on resistance of 100mR. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 1.08W. Packaged in a 3-pin SOT-23 surface-mount plastic package.
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Diodes DMP2215L-7 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 100mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.08W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.08W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -890mV |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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