P-channel MOSFET with 30V drain-source voltage and 16.1A continuous drain current. Features a low 25mΩ drain-source resistance and 1.678nF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.15W. Packaged in a TO-252-3 surface-mount package, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP3025LK3-13 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
16.1A
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
1.678nF
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.15W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
25mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1V
Turn-Off Delay Time
44ns
Turn-On Delay Time
3.5ns
Weight
0.139332oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP3025LK3-13 Datasheet
Download the complete datasheet for Diodes DMP3025LK3-13 to view detailed technical specifications.
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