P-channel MOSFET with 30V drain-source voltage and 16.1A continuous drain current. Features a low 25mΩ drain-source resistance and 1.678nF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.15W. Packaged in a TO-252-3 surface-mount package, this silicon Metal-oxide Semiconductor FET is RoHS compliant.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 16.1A |
| Drain to Source Resistance | 25mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.678nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.15W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 25mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 3.5ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
| RoHS | Compliant |
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