
P-channel MOSFET, 30V Drain-Source Voltage, 4.3A Continuous Drain Current, and 45mΩ Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a surface mount SOT-26 plastic package with dimensions of 3mm length, 1.6mm width, and 1.1mm height. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.25W. Key switching characteristics include a 10.2ns turn-on delay and 50.1ns turn-off delay.
Diodes DMP3056LDM-7 technical specifications.
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 22.3ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 948pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | P-CHANNEL |
| Rds On Max | 45mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50.1ns |
| Turn-On Delay Time | 10.2ns |
| Weight | 0.000529oz |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP3056LDM-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
