
P-channel MOSFET, 30V Drain-Source Voltage, 4.3A Continuous Drain Current, and 45mΩ Drain-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a surface mount SOT-26 plastic package with dimensions of 3mm length, 1.6mm width, and 1.1mm height. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.25W. Key switching characteristics include a 10.2ns turn-on delay and 50.1ns turn-off delay.
Sign in to ask questions about the Diodes DMP3056LDM-7 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMP3056LDM-7 technical specifications.
| Package/Case | SOT-26 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 22.3ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 1.1mm |
| Input Capacitance | 948pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | P-CHANNEL |
| Rds On Max | 45mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 50.1ns |
| Turn-On Delay Time | 10.2ns |
| Weight | 0.000529oz |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP3056LDM-7 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
