P-channel, single-element silicon JFET designed for small signal applications. Features a 30V drain-source voltage (Vdss) and a continuous drain current (ID) of 760mA. Offers a low drain-source on-resistance (Rds On) of 1 Ohm and a gate-source voltage (Vgs) of 8V. Packaged in a compact X2-DFN1006-3 surface-mount package with dimensions of 1.08mm (L) x 0.675mm (W) x 0.35mm (H). Operates across a temperature range of -55°C to 150°C.
PackageDFN
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP31D0UFB4-7B technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
760mA
Drain to Source Resistance
450mR
Drain to Source Voltage (Vdss)
30V
Fall Time
16.6ns
Gate to Source Voltage (Vgs)
8V
Height
0.35mm
Input Capacitance
76pF
Length
1.08mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
460mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
10000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Turn-Off Delay Time
35.71ns
Turn-On Delay Time
4.98ns
Width
0.675mm
Compliance
RoHS
Compliant
Datasheet
Diodes DMP31D0UFB4-7B Datasheet
Download the complete datasheet for Diodes DMP31D0UFB4-7B to view detailed technical specifications.
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