P-channel MOSFET with a -40V drain-source voltage and 14A continuous drain current. Features a low 11mΩ drain-source on-resistance and a threshold voltage of -2V. This silicon metal-oxide semiconductor FET is housed in a TO-252-3 package for surface mounting, offering a maximum power dissipation of 3.5W and operating temperature range of -55°C to 150°C. Turn-on delay time is 13.2ns with a fall time of 137ns.
PackageTO-252-3
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Diodes DMP4015SK3-13 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 137ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 4.234nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 302.7ns |
| Turn-On Delay Time | 13.2ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMP4015SK3-13 Datasheet
Download the complete datasheet for Diodes DMP4015SK3-13 to view detailed technical specifications.
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