P-channel MOSFET with a -40V drain-source voltage and 14A continuous drain current. Features a low 11mΩ drain-source on-resistance and a threshold voltage of -2V. This silicon metal-oxide semiconductor FET is housed in a TO-252-3 package for surface mounting, offering a maximum power dissipation of 3.5W and operating temperature range of -55°C to 150°C. Turn-on delay time is 13.2ns with a fall time of 137ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Diodes DMP4015SK3-13 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Diodes DMP4015SK3-13 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 137ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 2.39mm |
| Input Capacitance | 4.234nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -2V |
| Turn-Off Delay Time | 302.7ns |
| Turn-On Delay Time | 13.2ns |
| Weight | 0.139332oz |
| Width | 6.2mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DMP4015SK3-13 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
