P-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mount applications. Features a continuous drain current of 8.5A and a drain-to-source voltage of 40V. Offers a low drain-to-source resistance of 15mR. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. This single-element transistor is packaged in a POWERDI5060-8 plastic package, supplied on tape and reel.
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Diodes DMP4015SPS-13 technical specifications.
| Continuous Drain Current (ID) | 8.5A |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 137.9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 1.1mm |
| Input Capacitance | 4.234nF |
| Lead Free | Lead Free |
| Length | 5.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 302.7ns |
| Turn-On Delay Time | 13.2ns |
| Weight | 0.003386oz |
| Width | 6mm |
| RoHS | Compliant |
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