P-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 7.6A continuous drain current. This dual dual drain configured transistor offers a low 25mOhm drain-source resistance at 10V Vgs. Housed in an 8-pin SO package with gull-wing leads for surface mounting, it boasts a package length of 4.9mm and width of 3.9mm. Operating temperature range is -55°C to 150°C.
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Diodes DMP4025LSD-13 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SO |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 4.9 |
| Package Width (mm) | 3.9 |
| Package Height (mm) | 1.45 |
| Seated Plane Height (mm) | 1.6 |
| Pin Pitch (mm) | 1.27 |
| Package Weight (g) | 0.074 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 7.6A |
| Maximum Gate Threshold Voltage | 1.8V |
| Maximum Drain Source Resistance | 25@10VmOhm |
| Typical Gate Charge @ Vgs | 33.7@10V|[email protected]nC |
| Typical Gate Charge @ 10V | 33.7nC |
| Typical Input Capacitance @ Vds | 1640@20VpF |
| Maximum Power Dissipation | 2140mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 179pF |
| Cage Code | 6M0U4 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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