N-Channel Power MOSFET, 30V Vds, 10.4A Continuous Drain Current. Features low 13mΩ Rds(on) at Vgs=10V, 6.6ns fall time, and 5.5ns turn-on delay. Operates from -55°C to 150°C with 1.55W max power dissipation. Packaged in a green, plastic SOP-8 surface-mount package.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Diodes DMS3014SSS-13 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 10.4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.6ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.296nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.55W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33.1ns |
| Turn-On Delay Time | 5.5ns |
| Weight | 0.00261oz |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DMS3014SSS-13 Datasheet
Download the complete datasheet for Diodes DMS3014SSS-13 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.