Power Field-Effect Transistor, 9.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SOP-8
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Diodes DMS3016SSSA-13 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.69ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.849nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.54W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 36.41ns |
| Turn-On Delay Time | 6.62ns |
| Weight | 0.00261oz |
| RoHS | Compliant |
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