N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a low on-resistance of 0.015 ohms and a continuous drain current capability of 60.7A at 100V. This single-element device is housed in a TO-252 DPAK-3/2 package, offering efficient thermal performance.
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Technical Specifications
Diodes DMT10H010LK3-13 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes DMT10H010LK3-13 Datasheet
Download the complete datasheet for Diodes DMT10H010LK3-13 to view detailed technical specifications.
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