N-Channel Power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.018 ohms. This single-element silicon Metal-oxide Semiconductor FET is rated for a continuous drain current of 30A. Packaged in a TO-252 (DPAK-3/2) surface-mount package, it offers a robust solution for power switching applications.
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Technical Specifications
Diodes DMT10H015LK3-13 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes DMT10H015LK3-13 Datasheet
Download the complete datasheet for Diodes DMT10H015LK3-13 to view detailed technical specifications.
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