This N-channel enhancement-mode MOSFET is rated for 100 V drain-source voltage and is optimized for low on-resistance with fast switching performance. It supports up to 100 A continuous drain current at case temperature of 25°C and 19 A at ambient temperature of 25°C. The device is supplied in a PowerDI5060-8 package and is intended for motor control, DC-DC converters, and power management applications. It is specified with a maximum RDS(on) of 4.3 mΩ at 10 V gate drive and 6.2 mΩ at 4.5 V gate drive. The part uses a lead-free finish and is RoHS compliant, halogen free, and antimony free.
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Diodes DMT10H4M5LPS technical specifications.
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current at TA=25°C | 19A |
| Continuous Drain Current at TC=25°C | 100A |
| Pulsed Drain Current | 400A |
| Power Dissipation at TA=25°C | 2.3W |
| Power Dissipation at TC=25°C | 113W |
| Drain-Source On-Resistance Max at VGS=10V | 4.3mΩ |
| Drain-Source On-Resistance Max at VGS=4.5V | 6.2mΩ |
| Gate Threshold Voltage | 1.3 to 2.5V |
| Total Gate Charge | 80nC |
| Input Capacitance | 4843pF |
| Output Capacitance | 1302pF |
| Reverse Transfer Capacitance | 25.5pF |
| Avalanche Energy | 240mJ |
| Reverse Recovery Time | 63ns |
| Thermal Resistance Junction-to-Case | 1.1°C/W |
| Operating and Storage Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Lead-free Finish | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
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