N-Channel Power MOSFET featuring 60V drain-source voltage and 7.5A continuous drain current. This silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.018 ohms. It is a single-element device housed in an 8-terminal plastic SOP package with dual terminal positioning.
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Technical Specifications
Diodes DMT6016LSS-13 technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Diodes DMT6016LSS-13 Datasheet
Download the complete datasheet for Diodes DMT6016LSS-13 to view detailed technical specifications.
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