This N-channel enhancement mode MOSFET is rated for 100 V drain-source voltage and ±20 V gate-source voltage. It supports continuous drain current up to 20 A at 25°C ambient and 100 A at 25°C case, with maximum on-resistance of 4.3 mΩ at 10 V gate drive and 6.2 mΩ at 4.5 V gate drive. Typical total gate charge is 80 nC and typical input capacitance is 4843 pF at 50 V. The device is supplied in the PowerDI5060-8 package and is intended for motor control, DC-DC converters, and power management applications. It has a lead-free finish, is RoHS compliant, and is identified as a green device that is halogen and antimony free.
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Diodes DMTH10H4M5LPS technical specifications.
| AEC Qualified | No |
| Polarity | N |
| ESD Diodes | No |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current @Ta=25°C | 20A |
| Continuous Drain Current @Tc=25°C | 100A |
| Power Dissipation @Ta=25°C | 2.7W |
| Power Dissipation @Tc=25°C | 136W |
| RDS(on) Max @VGS=10V | 4.3mΩ |
| RDS(on) Max @VGS=4.5V | 6.2mΩ |
| Gate Threshold Voltage Max | 2.5V |
| Total Gate Charge Typ @VGS=10V | 80nC |
| Input Capacitance Typ | 4843pF |
| Input Capacitance Test Voltage | 50V |
| RoHS | Compliant |
| Lead-free Finish | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
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