N-channel silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 100A and a drain-source voltage (V(DS)) of 60V. Boasts a low on-resistance of 0.003 ohms for efficient power handling. This single-element device utilizes a 5-terminal configuration with dual terminal positioning.
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Diodes DMTH6002LPS-13 technical specifications.
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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