N-Channel Power MOSFET featuring 60V drain-source voltage and a low 0.01-ohm on-resistance. Delivers continuous drain current up to 14.2A. This single-element silicon Metal-oxide Semiconductor FET is housed in a TO-252 DPAK-3/2 package.
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Diodes DMTH6009LK3-13 technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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