N-Channel Power MOSFET, featuring a 60V drain-source voltage and a low on-resistance of 0.016 ohms. This single-element silicon device offers a continuous drain current of 9.8A. It is a 5-terminal component with a dual terminal position.
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Technical Specifications
Diodes DMTH6016LPSQ-13 technical specifications.
General
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Diodes DMTH6016LPSQ-13 Datasheet
Download the complete datasheet for Diodes DMTH6016LPSQ-13 to view detailed technical specifications.
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