The DN0150ALP4-7 is a surface mount NPN bipolar junction transistor with a collector base voltage rating of 60V and a maximum collector current of 100mA. It has a maximum power dissipation of 450mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a DFN package and is available in quantities of 3000 per reel.
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Diodes DN0150ALP4-7 technical specifications.
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 60MHz |
| Height | 0.35mm |
| Length | 1mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | DN0150 |
| Transition Frequency | 60MHz |
| Width | 0.6mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes DN0150ALP4-7 to view detailed technical specifications.
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