The DN0150ALP4-7B is a surface mount NPN transistor with a maximum collector-emitter breakdown voltage of 50V and a collector-emitter saturation voltage of 250mV. It can handle a continuous collector current of 100mA and a maximum power dissipation of 450mW. The transistor has a gain bandwidth product of 60MHz and operates over a temperature range of -55°C to 150°C. It is compliant with RoHS and Reach SVHC regulations.
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Diodes DN0150ALP4-7B technical specifications.
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 60MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 60MHz |
| RoHS | Compliant |
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