NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 350V collector-emitter breakdown voltage (VCEO) and a 500mA maximum collector current. Operates within a temperature range of -55°C to 150°C. Packaged in a 3-lead SOT-23 surface-mount plastic package, this silicon transistor offers a transition frequency of 50MHz and a maximum power dissipation of 300mW. RoHS compliant and lead-free.
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Diodes DN350T05-7 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 350V |
| Weight | 0.000282oz |
| Width | 1.4mm |
| RoHS | Compliant |
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