DIODES

DNBT8105-7

Datasheet

NPN BJT Transistor, 60V, 1A, 150MHz, SOT-23, SM

Diodes

DNBT8105-7

Name: DNBT8105-7 Diodes
Brand: Diodes
SKU: DNBT8105-7

NPN BJT Transistor, 60V, 1A, 150MHz, SOT-23, SM

NPN Bipolar Junction Transistor (BJT) for switching applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Max Collector Current. Offers a minimum DC Current Gain (hFE) of 30 and a transition frequency of 150MHz. Packaged in a SOT-23 plastic surface-mount package with gull-wing terminals, this component is RoHS compliant and operates from -55°C to 150°C.

Frequency150MHz

PackageSOT-23

Current Rating1A

MountingSurface Mount

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Technical Specifications

Diodes DNBT8105-7 technical specifications.

General

Additional Feature	HIGH RELIABILITY
Package/Case	SOT-23
Collector Base Voltage (VCBO)	80V
Collector Emitter Breakdown Voltage	60V
Collector Emitter Saturation Voltage	500mV
Collector Emitter Voltage (VCEO)	60V
Collector-emitter Voltage-Max	500mV
Current Rating	1A
DC Current Gain-Min (hFE)	30
Emitter Base Voltage (VEBO)	5V
Frequency	150MHz
Gain Bandwidth Product	150MHz
Height	1mm
JESD-30 Code	R-PDSO-G3
Lead Free	Lead Free
Length	2.9mm
Max Breakdown Voltage	60V
Max Collector Current	1A
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	600mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	1
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	NPN
Power Dissipation	300mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	10s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	150MHz
DC Rated Voltage	60V
Weight	0.000282oz
Width	1.3mm