NPN Bipolar Junction Transistor (BJT) for switching applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Max Collector Current. Offers a minimum DC Current Gain (hFE) of 30 and a transition frequency of 150MHz. Packaged in a SOT-23 plastic surface-mount package with gull-wing terminals, this component is RoHS compliant and operates from -55°C to 150°C.
Frequency150MHz
PackageSOT-23
Current Rating1A
MountingSurface Mount
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Technical Specifications
Diodes DNBT8105-7 technical specifications.
General
Additional Feature
HIGH RELIABILITY
Package/Case
SOT-23
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
DC Current Gain-Min (hFE)
30
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
1mm
JESD-30 Code
R-PDSO-G3
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
1
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
150MHz
DC Rated Voltage
60V
Weight
0.000282oz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Diodes DNBT8105-7 Datasheet
Download the complete datasheet for Diodes DNBT8105-7 to view detailed technical specifications.
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