
NPN Bipolar Junction Transistor (BJT) for switching applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a 1A Max Collector Current. Offers a minimum DC Current Gain (hFE) of 30 and a transition frequency of 150MHz. Packaged in a SOT-23 plastic surface-mount package with gull-wing terminals, this component is RoHS compliant and operates from -55°C to 150°C.
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Diodes DNBT8105-7 technical specifications.
| Additional Feature | HIGH RELIABILITY |
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| DC Current Gain-Min (hFE) | 30 |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1mm |
| JESD-30 Code | R-PDSO-G3 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600mW |
| Moisture Sensitivity Level | 1 |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Quantity | 3000 |
| Package Shape | Rectangular |
| Packaging | Tape and Reel |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 10s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| Weight | 0.000282oz |
| Width | 1.3mm |
| RoHS | Compliant |
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