NPN silicon bipolar junction transistor for small signal applications. Features a 60V collector-emitter breakdown voltage and 1A maximum collector current. Offers a 270MHz gain bandwidth product and a 250mV collector-emitter saturation voltage. Packaged in a TO-236-3 surface-mount plastic package, this component operates from -55°C to 150°C and is RoHS compliant.
PackageTO-236-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes DNLS160-7 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 270MHz |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 270MHz |
| Weight | 0.000282oz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DNLS160-7 Datasheet
Download the complete datasheet for Diodes DNLS160-7 to view detailed technical specifications.
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