NPN bipolar junction transistor (BJT) in a SOT89-3L (TO-243AA) plastic package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. Offers a transition frequency of 100MHz and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C. Surface mountable, lead-free, and RoHS compliant.
PackageTO-243AA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DNLS350Y-13 technical specifications.
General
| Package/Case | TO-243AA |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 370mV |
| Collector-emitter Voltage-Max | 370mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1.5mm |
| Lead Free | Lead Free |
| Length | 4.5mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.001834oz |
| Width | 2.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes DNLS350Y-13 Datasheet
Download the complete datasheet for Diodes DNLS350Y-13 to view detailed technical specifications.
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