The DP0150BLP4-7B is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 450mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a surface mount DFN1006H4-3 package and is compliant with RoHS and Reach SVHC regulations.
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Diodes DP0150BLP4-7B technical specifications.
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 80MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DP0150BLP4-7B to view detailed technical specifications.
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