Diodes DP0150BLP4-7B technical specifications.
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 80MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
| RoHS | Compliant |
Download the complete datasheet for Diodes DP0150BLP4-7B to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.