PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current (IC). Operates with a 220MHz Transition Frequency (fT) and 250 minimum hFE. Housed in an ultra-small, 6-pin SOT-563 plastic package for surface mounting. RoHS and REACH SVHC compliant.
Frequency220MHz
PackageSOT-563
MountingSurface Mount
PolarityPNP
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Technical Specifications
Diodes DPLS160V-7 technical specifications.
General
Package/Case
SOT-563
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
330mV
Emitter Base Voltage (VEBO)
5V
Frequency
220MHz
Gain Bandwidth Product
220MHz
Height
0.6mm
hFE Min
250
Length
1.6mm
Max Breakdown Voltage
60V
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
220MHz
Weight
0.000106oz
Width
1.2mm
Compliance
RoHS
Compliant
Datasheet
Diodes DPLS160V-7 Datasheet
Download the complete datasheet for Diodes DPLS160V-7 to view detailed technical specifications.
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