PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and 1A Max Collector Current (IC). Operates with a 220MHz Transition Frequency (fT) and 250 minimum hFE. Housed in an ultra-small, 6-pin SOT-563 plastic package for surface mounting. RoHS and REACH SVHC compliant.
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Diodes DPLS160V-7 technical specifications.
| Package/Case | SOT-563 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 330mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 220MHz |
| Gain Bandwidth Product | 220MHz |
| Height | 0.6mm |
| hFE Min | 250 |
| Length | 1.6mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 220MHz |
| Weight | 0.000106oz |
| Width | 1.2mm |
| RoHS | Compliant |
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